LED: the star of hope - China's LED industry development and the prospect of another

Current situation of the development of China's domestic LED industry

as of December 2006, our country has more than ten epitaxy chip manufacturers have MOCVD equipment, production of a total of 40 units number. In accordance with the manufacturer's expansion plans, 2007 are expected to be put into use in succession have 15 sets of MOCVD installation, make domestic GaN MOCVD equipment increased to 55 machines.

2006 domestic LED chip market distribution as shown in figure 5. The InGaN chips market capitalization of about 43%, four yuan InGaAlP chip market capitalization of about occupy 15% of the domestic LED chip; Other kinds of the LED chip market capitalization of about 42%. Calculated from domestic chip production, domestic InGaN chips in 2006 output value of 4. Domestic demand for InGaN chip output value 500 million yuan, the same period 2. 5 billion yuan; Domestic the InGaN chips ( PuLiang and four yuan) Gross output value of 600 million yuan, while domestic demand for the InGaN chips output value 1. 7 billion yuan, total 4. 2 billion yuan total domestic chip market demand. InGaN, and highlighting four yuan accounted for 58% of total domestic chip, that extend chip manufacturing and application at home and abroad market development to a certain level.

at present, our country has a certain package size of about 600 enterprises, a variety of large and small packaging, which has more than 1000 enterprises, the current domestic LED device packaging capacity about 60 billion/year, 2006 of domestic high brightness LED packaging products sales of about 14. 6 billion yuan, 46% higher than 10 billion yuan in 2005. From the point of distribution areas, mainly in the pearl river delta, Yangtze river delta, such as jiangxi, fujian, bohai rim region. ( In 2005 the domestic LED industry output value of 13. 3 billion yuan, including packaging packaging products sales of about 10 billion) 。

in terms of production capacity, with the expansion of domestic related enterprises production and gradually into the new chip company, driven by domestic demand market, domestic InGaN chips capacity has been from 65 kk/double in 2003 to 2005, 400 kk/month, further increase to 600 kk, 2006 / month, domestic produced supply rate increase year by year. Expected in the next few years domestic InGaN chips to remain around 30% compound annual growth rate of domestic 2010 will surpass Japan to become the world's second largest GaN chip production base, production capacity up to 1650 kk/month, actually because of the LED MOCVD equipment capacity increase so fast, after these estimates conservative.

in industrial technology development, research and development of domestic has 1 W power LED chip can be industrialization, its luminous efficiency for lm 30 ~ 40 lm/W, up to 47. 5 lm/W, a single device transmitted power is 150 mw, up to 189 mw. Nanchang university in recent years to carry out on silicon substrate to grow GaN epitaxial materials research, has been developed by blue chip transmission power 7 mw ~ 8 mw, it is best to 9 mw ~ 10 mw, chip yield was 80%, the power LED chip under 350 ma transmission power is 100 mw ~ 150 mw, best can reach 150 mw. Under the 500 ma, 1000 hours of electricity experiment, blue light failure is less than 5%. The results of a breakthrough, through the '863' project acceptance, and won many international invention patent has independent property rights. The patent to break the monopoly sapphire substrate and the United States, Japan, the company currently Cree silicon carbide substrate semiconductor lighting technology company monopoly situation, the formation of sapphire, silicon carbide, silicon substrate is made of blu-ray solution situation of the three pillars of semiconductor lighting technology will not be in the process of industrialization, and Cree blu-ray patent restriction, and by far the most mature white synthetic solution is blue + YAG phosphor powder, namely the future into the white light lighting domain must first master the blue chip technology, nanchang university of silicon substrate blu-ray patent has very broad market prospects. The morning of February 1, 2007, is expected to total investment of up to 70 million dollars of lattice lighting ( Jiangxi) Co. , LTD. 'silicon substrate light emitting diode material and devices' industrialization projects, formal in nanchang high-tech industrial development zone to build a phase of the project. The project technology came from nanchang university light-emitting materials and devices engineering research center of Ministry of Education, and the jinsha river, Mayfield and AsiaVest three international venture capital fund support. The three phase of the industrialization project construction, the installment construction is expected to be completed by the end of this year, form the annual output of 3 billion grain of silicon substrate blue, green LED chip production capacity; Phase ii construction implementation of silicon substrate LED chip 14 billion grains of blue, green, 3 period built on middle and lower reaches of the industrial chain, the realization of the LED industry cluster, achieve an annual output value of 5 billion yuan.

dalian road beauty through its acquisition of AXT companies in the United States for more than 40 chip core technology patents, and access to the entire technical team, therefore the strongest domestic chip technology research and development ability, the road in the United States only have ten of the MOCVD, domestic production capacity is not large, more MOCVD equipment AXT in the United States; Domestic xiamen three largest, technical level and are in the top, other such as silan micro ( 11. 17, - 0. 08 - 0. 71%) Its core silan Ming in recent years, great progress in technology, prospect of these enterprises is very clear.