UK experts with half polarity GaN cost-effective LED growth

( Reading] The university of Sheffield, 谢菲尔德大学) A research team recently in the applied physics letters, 应用物理信) The journal published in half polarity gallium nitride ( GaN) Or. 。 。

the university of Sheffield, 谢菲尔德大学) A research team recently in the applied physics letters, 应用物理信) The journal published in half polarity gallium nitride ( GaN) The latest published or growth LED on sapphire substrate. Use in the M -

Parts relate the growth of the sapphire substrate GaN manufacturing micro column array template, researchers can on the excessive growth of half polarity GaN ( 11 - 22) Growth has higher quantum efficiency of leds.

compared with C - Parts relate the growth of the sapphire substrate, commercial LED the team in a polar materials on the growth of green light LED display light wavelength of the blue displacement with the drive current increase and decrease. Displacement observed in blue is also applicable in yellow, green and yellow light LED, as a result, the researchers found that the growth of LED is a kind of effective inhibition of quantum star dazzle effect and limitation.

in 5 ma, 20 ma and 100 ma of ( a) Green ( b) Yellow, green, C) Yellow ( d) Amber LED electroluminescent figure

the researchers measured the light source on the wafer output increased linearly with the current increase, and the external quantum efficiency shows a C - for commercial use The efficiency of Plane LED attenuation ( 效率- - - - - - 下垂) The situation has improved significantly. Electroluminescent polarization measurement shows half polarity LED polarization ratio is about 25%.

the researchers claimed that the preliminary results show that the excessive growth of technology is potentially a more cost-effective way, but in the long wavelength region can implement efficient half polarity GaN launchers.